Title :
Fault localization by Dynamic Laser Stimulation extended testing
Author_Institution :
DCT/AQ/LE, CNES, Toulouse, France
Abstract :
Up to date ULSI devices are triggering incredible challenges for End User Failure Analyst. Laser Stimulation (LS) techniques is one of the most adapted to face them. Static Laser Stimulation (SLS), with an appropriate choice of wavelength, has been widely use for leakage localization. More recently, Dynamic Laser Stimulation (DLS) has been applied to localize soft defects. It has been completed by Variation Mapping techniques (xVM). Today, Dynamic Laser Stimulation Extended testing, based on multi xVM and Full Dynamic Laser Stimulation (FDLS) open a wider range of applications for failure analysis and reliability purpose.
Keywords :
ULSI; failure analysis; integrated circuit reliability; integrated circuit testing; laser beam applications; ULSI devices; dynamic laser stimulation extended testing; end user failure analyst; failure analysis; fault localization; static laser stimulation; variation mapping techniques; Atomic force microscopy; Electric variables; Failure analysis; Helium; Probes; Pulp manufacturing; Scanning electron microscopy; Silicides; Testing; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232671
