Title :
Comparison of breakdown mechanism of HfO2 and HfSiOx high-k gate dielectrics with N2 RTA treatment on TDDB constant voltage stress
Author :
Lin, Cheng-Li ; Chou, Mei-Yuan ; Hong, Jia-Jun ; Kang, Tsung-Kuei ; Wu, Shich-Chuan ; Juan, Pi-Chun
Author_Institution :
Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan
Abstract :
In this work, we study the effects of rapid thermal annealing (RTA) on HfO2 and HfSiOx gate dielectrics. The film electrical characteristics, TDDB reliability, breakdown characteristics and mechanism, and the optimum temperature of N2 RTA treatment were investigated. We also propose a model to explain breakdown mechanism and the difference between HfO2 and HfSiOx dielectrics. For lifetime projection of TDDB reliability, the HfSiOx dielectric possesses less breakdown detection issue and superior time to breakdown than those of HfO2 dielectric.
Keywords :
dielectric materials; electric breakdown; films; hafnium compounds; rapid thermal annealing; silicon compounds; HfO2; HfSiOx; RTA treatment; TDDB constant voltage stress; TDDB reliability; breakdown characteristics; constant voltage stress; film electrical characteristics; gate dielectric; rapid thermal annealing; time dependent dielectric breakdown testing; Capacitance-voltage characteristics; Dielectric breakdown; Dielectric measurements; Electric breakdown; Electric variables; Hafnium oxide; High-K gate dielectrics; Leakage current; Rapid thermal annealing; Temperature;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232675
