Linear Electro-Optic Effect in Vertical-Cavity Surface Emitting Lasers Based on Gaas Quantum Well

Author

Derebezov, Ilya A.

Author_Institution

Inst. of Semicond. Phys., Novosibirsk

fYear

2007

fDate

June 1 2007-July 5 2007

Firstpage

88

Lastpage

88

Abstract

The super-fine doublet and triplet structure of VCSEL´s modes has been discovered using a high resolution (~10 pm) spectrometer. Typical peaks separation in doublet and triplet structures is about 0.025 nm. Present a model that enables to estimate how much of the electro-optic effect produced by the inevitable internal electric field in DBR can modify lasing characteristic of VCSEL´s.

Keywords

electro-optical effects; gallium arsenide; laser modes; quantum well lasers; semiconductor quantum wells; surface emitting lasers; GaAs; internal electric field; linear electro-optic effect; mode behavior; semiconductor quantum wells; vertical-cavity surface emitting lasers; Distributed Bragg reflectors; Frequency estimation; Gallium arsenide; Laser modes; Laser theory; Lasers and electrooptics; Quantum well lasers; Reflectivity; Surface emitting lasers; Vertical cavity surface emitting lasers; lasing characteristic; mode behavior; vertical-cavity surface-emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on

Conference_Location

Erlagol, Altai

ISSN

1815-3712

Print_ISBN

978-5-7782-0752-3

Type

conf

DOI

10.1109/SIBEDM.2007.4292919

Filename

4292919