DocumentCode
3295417
Title
Building-in reliability and challenges in analysis in sub−100nm devices - An overview
Author
Radhakrishnan, M.K.
Author_Institution
NanoRel-Technical Consultants, 273, 18D Main, 6-Block, Koramangala, Bangalore 560095, India
fYear
2009
fDate
6-10 July 2009
Firstpage
150
Lastpage
152
Abstract
This paper reviews some of the recent trends in the fail site identification and physical analysis towards building-in reliability (BIR) in sub-100 nm devices.
Keywords
failure analysis; nanoelectronics; reliability; reviews; building-in reliability; fail site identification; physical analysis; size 100 nm; sub100 nm devices; Chemical analysis; Chemical technology; Design engineering; Electrostatic discharge; Failure analysis; Materials reliability; Nanoscale devices; Physics; Process design; Reliability engineering;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location
Suzhou, Jiangsu
ISSN
1946-1542
Print_ISBN
978-1-4244-3911-9
Electronic_ISBN
1946-1542
Type
conf
DOI
10.1109/IPFA.2009.5232680
Filename
5232680
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