Title :
A novel Negative Bias Temperature Instability model for nanoscale Finfet
Author :
Ma, Chenyue ; Li, Bo ; He, Frank ; Zhang, Xing ; Lin, Xinnan
Author_Institution :
Shenzhen Grad. Sch., Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China
Abstract :
This paper presents both static and dynamic NBTI Negative Bias Temperature Instability model based on the novel Reaction-Trapping theory. The accuracy of the proposed is greatly improved comparing to the classical Reaction-Diffusion theory, and the results agree well with the experiments over a wide range of temperature. Finally, the NBTI model of FinFETs is demonstrated through SRAM simulation.
Keywords :
MOSFET; nanotechnology; reaction-diffusion systems; semiconductor device models; NBTI; SRAM simulation; nanoscale Finfet; negative bias temperature instability model; reaction-diffusion theory; reaction-trapping theory; Charge pumps; Dielectric devices; FinFETs; High K dielectric materials; Negative bias temperature instability; Niobium compounds; Silicon; Stress; Titanium compounds; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
DOI :
10.1109/IPFA.2009.5232688
