DocumentCode
3295581
Title
Non-Volatile Phase Change Memory and Its Fabrication Technology
Author
Balashov, Alexander G. ; Balan, Nikita N. ; Kalinin, Alexander V.
Author_Institution
Moscow State Inst. of Electron. Eng., Moscow
fYear
2007
fDate
June 1 2007-July 5 2007
Firstpage
121
Lastpage
122
Abstract
This paper describes the non-volatile phase change memory structure without access transistor in the memory array. The method of the device fabricating on the standard CMOS wafer (e.g., 65 nm) is proposed. The method assumes the application of the custom cluster equipment with a nanoimprint tool. This cluster is used to form additional layers on the CMOS wafer to create the storage array. UV nanoimprint is used instead of the optical lithography.
Keywords
CMOS integrated circuits; nanolithography; phase change materials; CMOS wafer; UV nanoimprint; access transistor; cluster equipment; fabrication technology; memory array; nanoimprint tool; nonvolatile phase change memory; optical lithography; storage array; Conferences; Fabrication; Material storage; Nanostructured materials; Nonvolatile memory; Phase change materials; Phase change memory; Phased arrays; Planarization; Random access memory; UV nanoimprint; non-volatile memory; phase change material;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location
Erlagol, Altai
ISSN
1815-3712
Print_ISBN
978-5-7782-0752-3
Type
conf
DOI
10.1109/SIBEDM.2007.4292931
Filename
4292931
Link To Document