Characteristics of a Local Oxidation of silicon multi-tie body polysilicon thin-film transistor

Author

Chiu, Hsien-Nan ; Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Lin, Po-Hiesh ; Chang, Tzu-Feng ; Sun, Chih-Hung ; Chen, Hsuan-Hsu ; Kuo, Chih-Hao

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan

fYear

2009

fDate

6-10 July 2009

Firstpage

91

Lastpage

93

Abstract

This paper is to investigate the novel features of a Local Oxidation of silicon multi-tie body polycrystalline silicon thin-film transistor (LOCOS MTB poly-Si TFT) by using numerical simulations. Based on the results, our proposed TFT have improved reliability due to the presence of the LOCOS MTB scheme. Although a multi-body-tied scheme is not compatible in current TFT process, it is believed that this study can help us understand the influence of body-tied scheme on the properties of poly-Si TFT.

Keywords

numerical analysis; oxidation; reliability; thin film transistors; LOCOS MTB poly-Si TFT; local oxidation; numerical simulations; reliability; silicon multitie body polysilicon thin-film transistor; Oxidation; Silicon; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232692

Filename

5232692