DocumentCode :
3295612
Title :
Characteristics of a Local Oxidation of silicon multi-tie body polysilicon thin-film transistor
Author :
Chiu, Hsien-Nan ; Lin, Jyi-Tsong ; Eng, Yi-Chuen ; Lin, Po-Hiesh ; Chang, Tzu-Feng ; Sun, Chih-Hung ; Chen, Hsuan-Hsu ; Kuo, Chih-Hao
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear :
2009
fDate :
6-10 July 2009
Firstpage :
91
Lastpage :
93
Abstract :
This paper is to investigate the novel features of a Local Oxidation of silicon multi-tie body polycrystalline silicon thin-film transistor (LOCOS MTB poly-Si TFT) by using numerical simulations. Based on the results, our proposed TFT have improved reliability due to the presence of the LOCOS MTB scheme. Although a multi-body-tied scheme is not compatible in current TFT process, it is believed that this study can help us understand the influence of body-tied scheme on the properties of poly-Si TFT.
Keywords :
numerical analysis; oxidation; reliability; thin film transistors; LOCOS MTB poly-Si TFT; local oxidation; numerical simulations; reliability; silicon multitie body polysilicon thin-film transistor; Oxidation; Silicon; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
ISSN :
1946-1542
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
Type :
conf
DOI :
10.1109/IPFA.2009.5232692
Filename :
5232692
Link To Document :
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