Title :
Calculation of Transverse Magnetoresistance in Isotropic p-Type Polycrystalline Silicon
Author :
Moiseev, Alexey G.
Author_Institution :
Novosibirsk State Tech. Univ., Novosibirsk
fDate :
June 1 2007-July 5 2007
Abstract :
Calculation of the dependence of the transverse magnetoresistance in isotropic p-type polycrystalline silicon on a magnetic field is presented. The case is considered when holes relaxation is determined by scattering on both the grain boundaries potential barriers and the disordered net of silicon atoms.
Keywords :
elemental semiconductors; grain boundaries; magnetic fields; magnetic relaxation; magnetoresistance; silicon; Si; disordered net; grain boundaries; holes relaxation; isotropic polycrystalline silicon; magnetic field; p-type polycrystalline silicon; potential barriers; transverse magnetoresistance; Charge carriers; Conductivity; Equations; Grain boundaries; Kinetic theory; Magnetic analysis; Magnetic fields; Magnetoresistance; Scattering; Silicon; Magnetoresistance; isotropic p-type polycrystalline silicon;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4292934
