• DocumentCode
    3295658
  • Title

    Reliability and failure analysis in designing a typical operation amplifier

  • Author

    Chang, W.L. ; Luo, J.Y. ; Qi, Y. ; Wang, B.

  • Author_Institution
    Fac. fur Electrotechnik und Informationstechnik, Tech. Univ. Munchen, München, Germany
  • fYear
    2010
  • fDate
    5-9 July 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper describes two major reliability mechanisms: hot-carrier instability (HCI) and negative-bias temperature instability (NBTI). The reliability performance of a typical operational amplifier is shown and analysed. Results show that the circuit performance might improve as transistors degrade. Failure analysis on the mismatch is presented for the first time. Design and optimization issues are discussed taking the reliability into consideration, which forms a goal programming problem with several methods proposed to solve this.
  • Keywords
    failure analysis; hot carriers; mathematical programming; operational amplifiers; reliability; failure analysis; goal programming problem; hot-carrier instability; negative-bias temperature instability; operational amplifier design; reliability analysis; transistors; Circuit optimization; Degradation; Failure analysis; Hot carriers; Human computer interaction; Niobium compounds; Operational amplifiers; Performance analysis; Temperature; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
  • Conference_Location
    Singapore
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-5596-6
  • Type

    conf

  • DOI
    10.1109/IPFA.2010.5531973
  • Filename
    5531973