Title :
Reliability and failure analysis in designing a typical operation amplifier
Author :
Chang, W.L. ; Luo, J.Y. ; Qi, Y. ; Wang, B.
Author_Institution :
Fac. fur Electrotechnik und Informationstechnik, Tech. Univ. Munchen, München, Germany
Abstract :
This paper describes two major reliability mechanisms: hot-carrier instability (HCI) and negative-bias temperature instability (NBTI). The reliability performance of a typical operational amplifier is shown and analysed. Results show that the circuit performance might improve as transistors degrade. Failure analysis on the mismatch is presented for the first time. Design and optimization issues are discussed taking the reliability into consideration, which forms a goal programming problem with several methods proposed to solve this.
Keywords :
failure analysis; hot carriers; mathematical programming; operational amplifiers; reliability; failure analysis; goal programming problem; hot-carrier instability; negative-bias temperature instability; operational amplifier design; reliability analysis; transistors; Circuit optimization; Degradation; Failure analysis; Hot carriers; Human computer interaction; Niobium compounds; Operational amplifiers; Performance analysis; Temperature; Titanium compounds;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5531973