DocumentCode
3295658
Title
Reliability and failure analysis in designing a typical operation amplifier
Author
Chang, W.L. ; Luo, J.Y. ; Qi, Y. ; Wang, B.
Author_Institution
Fac. fur Electrotechnik und Informationstechnik, Tech. Univ. Munchen, München, Germany
fYear
2010
fDate
5-9 July 2010
Firstpage
1
Lastpage
4
Abstract
This paper describes two major reliability mechanisms: hot-carrier instability (HCI) and negative-bias temperature instability (NBTI). The reliability performance of a typical operational amplifier is shown and analysed. Results show that the circuit performance might improve as transistors degrade. Failure analysis on the mismatch is presented for the first time. Design and optimization issues are discussed taking the reliability into consideration, which forms a goal programming problem with several methods proposed to solve this.
Keywords
failure analysis; hot carriers; mathematical programming; operational amplifiers; reliability; failure analysis; goal programming problem; hot-carrier instability; negative-bias temperature instability; operational amplifier design; reliability analysis; transistors; Circuit optimization; Degradation; Failure analysis; Hot carriers; Human computer interaction; Niobium compounds; Operational amplifiers; Performance analysis; Temperature; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4244-5596-6
Type
conf
DOI
10.1109/IPFA.2010.5531973
Filename
5531973
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