Title :
Post-breakdown conduction in metal gate/MgO/InP structures
Author :
Miranda, E. ; O´Connor, E. ; Hughes, G. ; Casey, P. ; Cherkaoui, K. ; Monaghan, S. ; Long, R. ; O´Connell, D. ; Hurley, P.K.
Author_Institution :
Escola Tec. Super. d´´Eng., Univ. Autonoma de Barcelona, Barcelona, Spain
Abstract :
The electrical behavior of broken down thin films of magnesium oxide (MgO) grown on indium phosphide (InP) substrates was investigated. To our knowledge, this is the first report that identifies the Soft Break Down (SBD) conduction mode in a metal gate/high-kappa/III-V semiconductor structure. It is shown that the leakage current associated with this failure mode follows the power-law model I=aVb for both injection polarities in a voltage range that largely exceeds the one reported for SiO2. We also show that the Hard Break Down (HBD) current is remarkably high, involving significant thermal effects that are believed to be at the origin of the switching behavior exhibited by the I-V characteristics.
Keywords :
III-V semiconductors; MIS structures; electric breakdown; electron beam deposition; high-k dielectric thin films; indium compounds; magnesium compounds; metallic thin films; nickel alloys; silicon alloys; NiSi-MgO-InP; broken down thin films; hard break down current; metal gate-high K- III-V semiconductor structure; post breakdown conduction; soft break down; Breakdown voltage; Conducting materials; Dielectric breakdown; Dielectric materials; Dielectric substrates; Indium phosphide; Leakage current; Semiconductor films; Semiconductor thin films; Thermal conductivity;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
Print_ISBN :
978-1-4244-3911-9
DOI :
10.1109/IPFA.2009.5232695
