DocumentCode :
3295676
Title :
Degradation behavior of TaYOx-based metal-insulator-metal capacitors
Author :
Hota, M.K. ; Mahata, C. ; Mallik, S. ; Sarkar, C.K. ; Maiti, C.K.
Author_Institution :
Dept. of Electron. & ECE, Indian Inst. of Technol., Kharagpur, India
fYear :
2010
fDate :
5-9 July 2010
Firstpage :
1
Lastpage :
4
Abstract :
Characteristics under constant voltage stress from 5 V to 7 V were carried out to monitor the degradation behavior of TaYOx dielectric layers. It is found that capacitance and the voltage at maximum capacitance gradually increase during constant voltage stressing. However, the leakage current density remains almost constant with the injected charge for a certain period of time.
Keywords :
MIM devices; capacitors; current density; leakage currents; tantalum compounds; TaYOx; constant voltage stress; degradation behavior; dielectric layers; leakage current density; metal-insulator-metal capacitors; voltage 5 V to 7 V; Degradation; Eddy currents; Educational institutions; Environmental management; Knowledge management; Mechanical variables control; Oceans; Process control; Resource management; Technological innovation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
ISSN :
1946-1542
Print_ISBN :
978-1-4244-5596-6
Type :
conf
DOI :
10.1109/IPFA.2010.5531974
Filename :
5531974
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3295676
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