Title :
Advanced failure analysis of photon emission on FEOL failing of 45nm technology node
Author :
Changqing, Chen ; Boon, Ang Ghim ; Peng, Ng Hui ; Hong, Yip Kim ; Qingxiao, Wang
Author_Institution :
Global Foundries, Singapore, Singapore
Abstract :
Global failure analysis techniques are very critical in the failure site isolation, especially continuous scaling down IC device. Active photon probing is most dominant technique of the global failure analysis technique. In this paper, two real case of the 45 nm technology node was studied. Both of the unit failed in the FEOL. Thermally-induced Voltage Alteration (TIVA) and Light-induce Voltage Alteration (LIVA) were performed on the failed device. Detailed analysis on the difference and nature of TIVA and LIVA were studied in this real case. TEM and EDX result also confirm the electrical FA result.
Keywords :
X-ray chemical analysis; emission; failure analysis; integrated circuit reliability; thermal analysis; transmission electron microscopy; EDX; FEOL; IC device; TEM; active photon probing; electrical FA; failure site isolation; global failure analysis techniques; light-induce voltage alteration; photon emission; size 45 nm; thermal-induced voltage alteration; Charge carrier processes; Condition monitoring; Failure analysis; Foundries; Isolation technology; Optical beams; Photonic integrated circuits; Silicon; Thermal resistance; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5531981
