• DocumentCode
    3295816
  • Title

    Study of ion beam damage on FIB prepared TEM samples

  • Author

    Tang, L.J. ; Zhang, Y.J. ; Bosman, M. ; Woo, Jasmine

  • Author_Institution
    Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
  • fYear
    2010
  • fDate
    5-9 July 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Focused Ion Beam (FIB) milling has been widely used for the preparation of TEM specimens in both cross-section and plan view configurations. FIB induced damage is a non-negligible influence on making a thin and clear TEM specimen. Low-KV FIB is one of the solutions to reduce the ion beam damage created in current FIB operation system. An understanding of the type of FIB generated artifact on different materials is important to subsequent TEM analyses and to optimize the sample preparation process. In this paper, three types of materials, Si, ZnO and Cu have been selected to study the normal and low-KV FIB ion beam damage and the impacts for FIB prepared TEM specimens are compared.
  • Keywords
    II-VI semiconductors; copper; focused ion beam technology; ion beam effects; milling; silicon; sputter etching; transmission electron microscopy; wide band gap semiconductors; zinc compounds; Cu; FIB generated artifact; Si; TEM samples; ZnO; focused ion beam milling; ion beam damage; low-KV FIB; plan view configurations; Amorphous materials; Copper; III-V semiconductor materials; Integrated circuit packaging; Ion beams; Milling; Protection; Temperature; Wire; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
  • Conference_Location
    Singapore
  • ISSN
    1946-1542
  • Print_ISBN
    978-1-4244-5596-6
  • Type

    conf

  • DOI
    10.1109/IPFA.2010.5531982
  • Filename
    5531982