DocumentCode
3295816
Title
Study of ion beam damage on FIB prepared TEM samples
Author
Tang, L.J. ; Zhang, Y.J. ; Bosman, M. ; Woo, Jasmine
Author_Institution
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear
2010
fDate
5-9 July 2010
Firstpage
1
Lastpage
4
Abstract
Focused Ion Beam (FIB) milling has been widely used for the preparation of TEM specimens in both cross-section and plan view configurations. FIB induced damage is a non-negligible influence on making a thin and clear TEM specimen. Low-KV FIB is one of the solutions to reduce the ion beam damage created in current FIB operation system. An understanding of the type of FIB generated artifact on different materials is important to subsequent TEM analyses and to optimize the sample preparation process. In this paper, three types of materials, Si, ZnO and Cu have been selected to study the normal and low-KV FIB ion beam damage and the impacts for FIB prepared TEM specimens are compared.
Keywords
II-VI semiconductors; copper; focused ion beam technology; ion beam effects; milling; silicon; sputter etching; transmission electron microscopy; wide band gap semiconductors; zinc compounds; Cu; FIB generated artifact; Si; TEM samples; ZnO; focused ion beam milling; ion beam damage; low-KV FIB; plan view configurations; Amorphous materials; Copper; III-V semiconductor materials; Integrated circuit packaging; Ion beams; Milling; Protection; Temperature; Wire; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4244-5596-6
Type
conf
DOI
10.1109/IPFA.2010.5531982
Filename
5531982
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