Title :
Wide-tuning, low-voltage 1GHz bandpass filter based on fT-integration
Author :
Khumsat, Phanum ; Worapishet, Apisak ; Burdett, Alison
Author_Institution :
Fac. of Eng., Prince of Songkla Univ., Thailand
Abstract :
An integrated bandpass filter based on the fT-integration technique is experimentally demonstrated for the first time in GHz frequency range. The fT-integrator configuration employed offers enhanced performance compared to the originally introduced structure with lower supply voltage, more accurate frequency control and less chip area while still maintaining a wide frequency tuning capability. Fabricated in 0.8 μm-BiCMOS, the experimental filter obtains a centre frequency tuning over 200% (from 420MHz to 1320MHz) with -52dB THD for output current at 50% modulation index, 30dB spurious free dynamic range and 1dB-compression-point dynamic range of 37dB at Q = 14. The circuit operates at 1.8V-supply voltage with current consumption in each integrator varying from 1.9mA to 4.2mA for the entire tuning range.
Keywords :
BiCMOS analogue integrated circuits; UHF filters; UHF integrated circuits; band-pass filters; harmonic distortion; integrating circuits; 0.8 micron; 1.8 V; 1.9 to 4.2 mA; 420 to 1320 MHz; BiCMOS; THD; bandpass filter; chip area; compression-point dynamic range; fT-integration; frequency control; spurious free dynamic range; supply voltage; wide frequency tuning capability; Band pass filters; Circuit optimization; Differential equations; Dynamic range; Frequency; Transistors; Tunable circuits and devices; Tuning; US Department of Transportation; Voltage;
Conference_Titel :
Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on
Print_ISBN :
0-7803-7523-8
DOI :
10.1109/MWSCAS.2002.1187047
