DocumentCode
3295924
Title
Determination of the local electric field strength near electric breakdown
Author
Geinzer, T. ; Heiderhoff, R. ; Phang, J.C.H. ; Balk, L.J.
Author_Institution
Dept. of Electron., Univ. of Wuppertal, Wuppertal, Germany
fYear
2010
fDate
5-9 July 2010
Firstpage
1
Lastpage
6
Abstract
For a detailed understanding of near electric breakdown a semiconductor device is analyzed by complementary Optical Beam Induced Current and energy-dispersive Photon Emission Microscopy. The potential and limit as well as the physical background of both techniques for the determination of the local electric field strength are discussed in detail.
Keywords
OBIC; electric field measurement; semiconductor device breakdown; semiconductor device reliability; complementary optical beam induced current; electric breakdown; energy-dispersive photon emission microscopy; local electric field strength; semiconductor device; Electric breakdown; Failure analysis; Integrated circuit reliability; Integrated optics; Optical beams; Optical filters; Optical microscopy; Optical scattering; Semiconductor devices; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location
Singapore
ISSN
1946-1542
Print_ISBN
978-1-4244-5596-6
Type
conf
DOI
10.1109/IPFA.2010.5531989
Filename
5531989
Link To Document