Title :
Analysis and optimisation of a nondissipative turn-off snubber for IGBT
Author_Institution :
SWICHTEC, Christchurch, New Zealand
Abstract :
This paper describes an analysis and of a turn-off snubber suitable for application in power IGBT circuits. The optimisation procedure limits the transistor temperature rise to an acceptable value (rather than minimising it) and minimises the reset time of the snubber. A simple design procedure is presented for snubber component calculation. The analytical results are verified by simulations and experiments
Keywords :
circuit optimisation; equivalent circuits; insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor device testing; snubbers; circuit analysis; circuit optimisation; nondissipative turn-off snubber; optimisation procedure; power IGBT circuits; reset time minimisation; transistor temperature rise; Circuits; Frequency; Inductors; Insulated gate bipolar transistors; MOSFETs; Performance analysis; Pulse width modulation; Snubbers; Switches; Topology;
Conference_Titel :
Telecommunications Energy Conference, 1997. INTELEC 97., 19th International
Conference_Location :
Melbourne, Vic.
Print_ISBN :
0-7803-3996-7
DOI :
10.1109/INTLEC.1997.645865
