Title :
Characterization of CVD diamond film and diamond-tip field emitter array for FED applications
Author :
Ju, Byeong Kwon ; Kim, Seong-Jin ; Lee, Yun Hi ; Park, Beom Soo ; Baik, Young-Joon ; Lim, Sungkyoo ; Oh, Myung Hwan
Author_Institution :
Div. of Electron. & Inf. Technol., Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
Diamond-tip field emitter arrays and a flat diamond films were fabricated and characterized. The tip radius of 300 A was obtained by using a silicon mold formed by orientation dependent etching (ODE). The fabricated diamond-tip array was identified as diamond from Raman spectroscopy. Emission current of 200 μA and threshold voltage of 600 V were obtained for the diamond-tip field emitter arrays from the current-voltage measurement. Emission current of 6 μA and threshold voltage of 800 V were obtained from the flat diamond film deposited under the same condition as diamond-tip field emitter arrays. The diamond-tip field emitter arrays were shown to have better electrical characteristics than the flat diamond films
Keywords :
CVD coatings; Raman spectroscopy; diamond; display devices; etching; vacuum microelectronics; 200 muA; 300 angstrom; 6 muA; 600 V; 800 V; C; CVD; FED applications; Raman spectroscopy; current-voltage measurement; emission current; field emitter array; orientation dependent etching; threshold voltage; tip radius; Current measurement; Electrons; Etching; Field emitter arrays; Low voltage; Raman scattering; Silicon; Spectroscopy; Substrates; Threshold voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601880
