DocumentCode :
3296119
Title :
Characterization of oxide traps by RTN measurement in MOSFETs and memory devices
Author :
Shin, Hyungcheol ; Oh, Byoungchan
Author_Institution :
Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Kwanak-gu, South Korea
fYear :
2010
fDate :
5-9 July 2010
Firstpage :
1
Lastpage :
5
Abstract :
Random telegraph noise (RTN) in various devices such as nano-wire, recessed-channel and high-k FET has been studied through various measurement techniques and analysis. By taking into account both effects which are variation of surface potential and poly depletion voltage drop, we proposed a new method for extracting both locations (xT, yT) and energy level (ECox - ET) of oxide traps.
Keywords :
MOSFET; dielectric devices; electric potential; semiconductor device measurement; telegraphy; MOSFET; RTN measurement; high-k FET; memory devices; nano-wire; oxide traps; poly depletion voltage drop; random telegraph noise; recessed-channel; surface potential; Electric variables measurement; Energy states; Equations; MOSFETs; Nanoscale devices; Noise measurement; Semiconductor device noise; Telegraphy; Threshold voltage; Voltage fluctuations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
ISSN :
1946-1542
Print_ISBN :
978-1-4244-5596-6
Type :
conf
DOI :
10.1109/IPFA.2010.5531998
Filename :
5531998
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3296119
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