Hot carrier stress induced negative differential resistance in the output characteristic of poly-Si TFTs

Author

Hu, Chunfeng ; Wang, Mingxiang ; Xu, Meijuan

Author_Institution

Dept. of Microelectron., Soochow Univ., Suzhou, China

fYear

2010

fDate

5-9 July 2010

Firstpage

1

Lastpage

4

Abstract

Hot carrier (HC) stress induced negative differential resistance (NDR) behavior in the reserve mode output characteristics of n-type poly-Si TFTs is first observed. The NDR phenomenon, i.e., I_ON decreases with increasing V_D is also found to increase at higher V_G but disappear when V_G<;V_TH and is reduced as stress time increases. Based on drain induced grain barrier lowering and thermionic emission controlled carrier conduction relating to the HC induced trap potential barrier, the NDR phenomenon can be understood.

Keywords

elemental semiconductors; hot carriers; silicon; thermionic emission; thin film transistors; Si; carrier conduction; drain induced grain barrier; hot carrier stress induced negative differential resistance; n-type poly-Si TFT; reserve mode output characteristics; thermionic emission; Application specific integrated circuits; Degradation; Electrodes; Hot carriers; Laboratories; Microelectronics; Temperature; Testing; Thermal stresses; Thermionic emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4244-5596-6

Type

conf

DOI

10.1109/IPFA.2010.5532000

Filename

5532000