Title :
Evaluation of nanowire field-effect transistors for electrostatic discharge (ESD) applications
Author :
Liu, Wen ; Liou, Juin J. ; Li, You ; Chung, J. ; Jeong, Y.H.
Author_Institution :
Sch. of EECS, Univ. of Central Florida, Orlando, FL, USA
Abstract :
Electrostatic discharge robustness of promising nano-devices, the gate-all-around nanowire field-effect transistor and double-gated poly-Si nanowire thin-film transistor, were characterized and compared with FinFETs for the first time using the transmission line pulsing (TLP) technique. Failure analysis of the devices was done by electrical characterization and microscopy inspection.
Keywords :
MOSFET; electrostatic discharge; elemental semiconductors; failure analysis; nanowires; silicon; transmission lines; ESD application; FinFET; Si; TLP technique; double-gated poly-Si nanowire thin-film transistor; electrical characterization; electrostatic discharge; failure analysis; gate-all-around nanowire field-effect transistor; microscopy inspection; nanodevice; transmission line pulsing; Double-gate FETs; Electrostatic discharge; Leakage current; Nanoscale devices; Pulse measurements; Robustness; Scanning electron microscopy; Thin film transistors; Transmission electron microscopy; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-5596-6
DOI :
10.1109/IPFA.2010.5532007
