DocumentCode
3296306
Title
Reliability prediction of MOS devices: experiments and model for charge build up and annealing
Author
Wulf, F. ; Braunig, D. ; Nickel, W.
Author_Institution
Dept. of Data Process. & Electron., Hahn-Meitner-Inst., Berlin, West Germany
fYear
1988
fDate
12-14 Apr 1988
Firstpage
150
Lastpage
157
Abstract
Similarities between bias-temperature (BT) and ionizing radiation stress results suggest a common microscopic nature of defects for oxide charge build-up and annealing. Therefore, experiments were performed to check the influence of technology and experimental conditions. A model based on chemical reaction between silicon and hydrogen can be used as a basis for understanding BT stress results and utilizing ionizing radiation as a rapid reliability screening tool
Keywords
annealing; insulated gate field effect transistors; reliability; semiconductor device models; semiconductor device testing; CMOS transistors; MOS devices; MOST; Si-H; annealing; bias temperature stress; charge build up; chemical reaction; ionizing radiation stress; model; reliability screening tool; threshold voltage shift; Annealing; Chemical technology; Density measurement; Frequency; Hydrogen; Interface states; Ionizing radiation; MOS devices; Microscopy; Predictive models; Silicon; Stress; Varactors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium 1988. 26th Annual Proceedings., International
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/RELPHY.1988.23443
Filename
23443
Link To Document