DocumentCode :
3296340
Title :
Investigation on TSOP warpage mechanism and improvement method
Author :
Wang, Lei ; Zhao, Zhenqing ; Wang, Jianhui ; Wen, Long ; Wang, Qian ; Lee, Jaisung
Author_Institution :
Samsung Semicond. China R&D Co. Ltd., Suzhou, China
fYear :
2009
fDate :
6-10 July 2009
Firstpage :
747
Lastpage :
750
Abstract :
This paper gives a detailed investigation on TSOP warpage mechanism. The influences of all the factors on warpage behavior, including materials (EMC ingredient and lead frame), lead frame design and assembly process, were investigated through numerical simulation and experimental study. The simulation result showed that low CTE material is a good choice for warpage reduction. And it also indicated that by properly modifying the lead frame design, the warpage performance can be improved. Much attention was paid to the curing process as this thermal process would obviously affect the stress formation and release in the package. It was deduced that a reduction in the cooling rate above Tg during cure would reduce warpage based on theoretical thermal analysis, and the experiment result proved it did work. Finally a modification to the cure process is proposed as the most cost effective and practicable solution in actual production.
Keywords :
curing; integrated circuit packaging; moulding; shrinkage; TSOP warpage mechanism; epoxy molding compound; lead frame design; thin small outline package; warpage performance; warpage reduction; Assembly; Cooling; Costs; Curing; Electromagnetic compatibility; Numerical simulation; Packaging; Process design; Production; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the
Conference_Location :
Suzhou, Jiangsu
ISSN :
1946-1542
Print_ISBN :
978-1-4244-3911-9
Electronic_ISBN :
1946-1542
Type :
conf
DOI :
10.1109/IPFA.2009.5232732
Filename :
5232732
Link To Document :
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