The characteristics of silicon field emission triode

Author

Chen, Pan-Ao ; Chen, Qun-Xia ; Huang, Zhong-Ping

Author_Institution

Lab. of Electron. Devices, Nanjing Electron. Devices Inst., China

fYear

1996

fDate

7-12 Jul 1996

Firstpage

538

Lastpage

541

Abstract

The silicon field emission triode is fabricated successfully in 3 inch silicon chips by using wet etching and dry-wet-dry alternate oxidation sharpening at 1000 °C. The array of tips is up to 50× 50, and the radii of tips are about 20 nm. The result shows that the anode current may reach 185 μ A when the grid voltage is 120 V, and the anode voltage is 800 V. The grid current is too weak to be measured because of the limitation of the resolution of measuring instrument. The influence of the height of the grid to anode current is also studied in experiment and in theory

Keywords

anodes; electron field emission; elemental semiconductors; etching; oxidation; silicon; triodes; vacuum microelectronics; 1000 degC; 120 V; 185 muA; 20 nm; 3 in; 800 V; Si; anode current; anode voltage; dry-wet-dry alternate oxidation sharpening; field emission triode; grid current; grid to anode current; grid voltage; measuring instrument resolution; tip array; wet etching; Anodes; Cathodes; Current measurement; Fabrication; Hafnium; Oxidation; Silicon; Space technology; Voltage; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601882

Filename

601882