The effect of microstructure on the electromigration lifetime distribution

Author

de Orio, R.L. ; Ceric, H. ; Cervenka, J. ; Selberherr, S.

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2009

fDate

6-10 July 2009

Firstpage

731

Lastpage

734

Abstract

In this work we analyze the influence of the statistical distribution of copper grain sizes on the electromigration time to failure distribution based on numerical simulations. We have applied a continuum multi-physics electromigration model which incorporates the effects of grain boundaries for stress build-up. It is shown that the lognormal distribution of grain sizes causes a lognormal distribution for the times to failure. Moreover, the increase of the standard deviation of the grain size distribution results in an increase of the electromigration lifetimes standard deviation.

Keywords

electromigration; grain boundaries; grain size; log normal distribution; continuum multiphysics electromigration model; electromigration lifetime distribution; electromigration lifetime standard deviation; grain boundary; grain size distribution; lognormal distribution; microstructure; statistical distribution; stress build-up; Copper; Electromigration; Failure analysis; Grain boundaries; Grain size; Integrated circuit interconnections; Microstructure; Numerical simulation; Statistical distributions; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232733

Filename

5232733