Depth-resolved photoemission microscopy for localization of leakage currents in through Silicon Vias (TSVs)

Depth-resolved IR photoemission microscopy was applied for localization of defects causing leakage currents within Through Si Vias (TSVs). Specifically, analyses of the changes in intensity and spatial distribution of the detected emission, as a function of the focal plane position, allow quantification of the depth of defects within the TSV. Physical failure analysis verified the presence of the defects at the coordinates specified by emission microscopy, and allowed defect failure mechanisms to be identified.