Effective kinetic variations with stress duration for multilayered metallizations

Author

Ondrusek, J.C. ; Nishimura, A. ; Hoang, H.H. ; Sugiura, T. ; Blumenthal, R. ; Kitagawa, H. ; McPherson, J.W.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1988

fDate

12-14 Apr 1988

Firstpage

179

Lastpage

184

Abstract

Electromigration (EM) in Ti:W/Al-1%Si two-layered and Ti/W/Al-1%Si three-layered metallizations was investigated. The activation energy and the EM performance were studied as functions of the change in resistance which results from EM damage. The effective activation energy was found to decrease monotonically with increasing test structure resistance under stress. The temperature coefficient of resistance supports a void formation model in the Al-Si layer as the resistance rise mechanism for the Ti:W/Al-Si multilayered film. An empirical form of the Black equation which incorporates resistance rise is proposed

Keywords

aluminium alloys; electromigration; metallisation; reliability; silicon alloys; titanium; tungsten; Black equation; Ti-W-AlSi; TiW-AlSi; activation energy; electromigration; kinetic variations; multilayered metallizations; resistance rise mechanism; stress duration; temperature coefficient of resistance; test structure resistance; three-layered metallizations; two layer system; void formation model; Electric resistance; Electromigration; Equations; Instruments; Kinetic theory; Metallization; Optical films; Plasma temperature; Stress; Temperature; Temperature sensors; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium 1988. 26th Annual Proceedings., International

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/RELPHY.1988.23447

Filename

23447