Title :
Effective kinetic variations with stress duration for multilayered metallizations
Author :
Ondrusek, J.C. ; Nishimura, A. ; Hoang, H.H. ; Sugiura, T. ; Blumenthal, R. ; Kitagawa, H. ; McPherson, J.W.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
Electromigration (EM) in Ti:W/Al-1%Si two-layered and Ti/W/Al-1%Si three-layered metallizations was investigated. The activation energy and the EM performance were studied as functions of the change in resistance which results from EM damage. The effective activation energy was found to decrease monotonically with increasing test structure resistance under stress. The temperature coefficient of resistance supports a void formation model in the Al-Si layer as the resistance rise mechanism for the Ti:W/Al-Si multilayered film. An empirical form of the Black equation which incorporates resistance rise is proposed
Keywords :
aluminium alloys; electromigration; metallisation; reliability; silicon alloys; titanium; tungsten; Black equation; Ti-W-AlSi; TiW-AlSi; activation energy; electromigration; kinetic variations; multilayered metallizations; resistance rise mechanism; stress duration; temperature coefficient of resistance; test structure resistance; three-layered metallizations; two layer system; void formation model; Electric resistance; Electromigration; Equations; Instruments; Kinetic theory; Metallization; Optical films; Plasma temperature; Stress; Temperature; Temperature sensors; Testing;
Conference_Titel :
Reliability Physics Symposium 1988. 26th Annual Proceedings., International
Conference_Location :
Monterey, CA
DOI :
10.1109/RELPHY.1988.23447
