• DocumentCode
    3296383
  • Title

    Effect of metal line geometry on electromigration lifetime in Al-Cu submicron interconnects

  • Author

    Kwok, Thomas

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • fYear
    1988
  • fDate
    12-14 Apr 1988
  • Firstpage
    185
  • Lastpage
    191
  • Abstract
    The dependence of electromigration lifetime on the metal line geometry in Al-Cu submicron lines was investigated. Results indicated that as the linewidth decreases, the lifetime initially decreases and then increases below a crucial width. The lifetime also decreases with increasing film thickness. Those Al-Cu submicron lines with line width comparable to or smaller than film thickness have longer electromigration lifetime than other Al-Cu fine lines. The effect of line length on electromigration lifetime was found to be small
  • Keywords
    aluminium alloys; copper alloys; electromigration; metallisation; reliability; AlCu submicron interconnects; electromigration lifetime; film thickness; linewidth; metal line geometry; Conducting materials; Conductive films; Current density; Electric resistance; Electromigration; Geometry; Temperature; Thin film devices; Transistors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium 1988. 26th Annual Proceedings., International
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/RELPHY.1988.23448
  • Filename
    23448