DocumentCode :
3296383
Title :
Effect of metal line geometry on electromigration lifetime in Al-Cu submicron interconnects
Author :
Kwok, Thomas
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
1988
fDate :
12-14 Apr 1988
Firstpage :
185
Lastpage :
191
Abstract :
The dependence of electromigration lifetime on the metal line geometry in Al-Cu submicron lines was investigated. Results indicated that as the linewidth decreases, the lifetime initially decreases and then increases below a crucial width. The lifetime also decreases with increasing film thickness. Those Al-Cu submicron lines with line width comparable to or smaller than film thickness have longer electromigration lifetime than other Al-Cu fine lines. The effect of line length on electromigration lifetime was found to be small
Keywords :
aluminium alloys; copper alloys; electromigration; metallisation; reliability; AlCu submicron interconnects; electromigration lifetime; film thickness; linewidth; metal line geometry; Conducting materials; Conductive films; Current density; Electric resistance; Electromigration; Geometry; Temperature; Thin film devices; Transistors; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium 1988. 26th Annual Proceedings., International
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/RELPHY.1988.23448
Filename :
23448
Link To Document :
بازگشت