Title :
A comparison between noise measurements and conventional electromigration reliability testing
Author :
Cottle, J.G. ; Chen, T.M. ; Rodbell, K.P.
Author_Institution :
Dept. of Electr. Eng., South Florida Univ., Tampa, FL, USA
Abstract :
Experiments designed to compare conventional median-time-to-failure (MTF) data with those obtained through the use of noise measurements are reported. Comparisons are made of aluminum and aluminum-copper alloy films from identical wafers fabricated with varying electromigration-sensitive parameters. The preliminary data indicate that noise measurements might be able to provide a quick, nondestructive, and sensitive method for characterizing thin film metallizations used as interconnects in integrated circuits. Furthermore, noise measurements offer the opportunity to characterize fully the kinetics of electromigration, once the source of the noise is well understood
Keywords :
electric noise measurement; electromigration; failure analysis; integrated circuit technology; metallic thin films; metallisation; reliability; Al; AlCu; electromigration kinetics; electromigration reliability testing; integrated circuits; interconnects; median-time-to-failure; noise measurements; thin film metallizations; Aluminum alloys; Current density; Current measurement; Electromigration; Integrated circuit interconnections; Integrated circuit metallization; Integrated circuit noise; Kinetic theory; Life estimation; Low-frequency noise; Noise measurement; Nondestructive testing; Temperature dependence; Thin film circuits; Transistors;
Conference_Titel :
Reliability Physics Symposium 1988. 26th Annual Proceedings., International
Conference_Location :
Monterey, CA
DOI :
10.1109/RELPHY.1988.23451
