Title :
High reliable Al-Si alloy/Si contacts by rapid thermal sintering
Author :
Umemura, Eiichi ; Onoda, Hiroshi ; Madokoro, Shoji
Author_Institution :
Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
Rapid thermal annealing technology has been applied to the sintering process for Al-Si alloy. Contact resistance was kept low by this technique, and low contact resistance was maintained even after postsintering heat treatment. The relationship between contact resistance and the number of Si nodules has been investigated. Si nodules and the Si at contact holes are considered to be precipitation nuclei for dissolved Si in Al-Si alloy. Precipitating Si is shared by Si nodules and contact holes after heat treatment. This model explains contact resistance change during heat treatments
Keywords :
aluminium alloys; contact resistance; incoherent light annealing; metallisation; reliability; silicon; silicon alloys; sintering; AlSi-Si; Si nodules; contact holes; contact resistance; high reliability; metallisation; postsintering heat treatment; precipitation nuclei; rapid thermal annealing; rapid thermal sintering; Contact resistance; Furnaces; Heat treatment; Inorganic materials; Maintenance; Metallization; Rapid thermal annealing; Rapid thermal processing; Resistance heating; Silicon alloys; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium 1988. 26th Annual Proceedings., International
Conference_Location :
Monterey, CA
DOI :
10.1109/RELPHY.1988.23455
