Title :
Patterning and electrical testing of field emission arrays with novel emitter geometries
Author :
Karpov, L.D. ; Genelev, A.P. ; Mirgorodski, Y.V. ; Tikhonsk, A.N.
Author_Institution :
SI Diamond Technol. Inc., Austin, TX, USA
Abstract :
Fabrication technology for Cu microtips with high aspect ratio, where microtip height is ~6.5-7.5 μm and microtip density in the active area is ~2.88×106 tips/cm2, via lift-off method is experimentally confirmed. We investigated the possibility of increasing emission uniformity though the introduction of a-Si multi-resistors into the microtips. We establish that reduction of fluctuation currents can be achieved with 300-350 A thick SiC coating over the microtips. We looked into emission properties of Cu microtips with dome-shaped Ti apex
Keywords :
copper; current fluctuations; electron device testing; electron field emission; testing; vacuum microelectronics; 300 to 350 A; 6.5 to 7.5 micron; Cu microtips; Si; SiC coating; SiC-Cu; Ti-Cu; a-Si multi-resistors; dome-shaped Ti apex; electrical testing; emission uniformity; emitter geometries; fabrication technology; field emission arrays; fluctuation currents reduction; high aspect ratio; lift-off method; patterning; Anodes; Cathodes; Chromium; Fabrication; Field emitter arrays; Geometry; Phosphors; Shape; Silicon carbide; Testing;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601883