DocumentCode :
3296799
Title :
Design of a 1 V low power CMOS bandgap reference based on resistive subdivision
Author :
Lasanen, K. ; Korkala, V. ; Räisänen-Ruotsalainen, E. ; Kostamovaara, J.
Author_Institution :
Dept. of Electr. Eng. & Infotech, Oulu Univ., Finland
Volume :
3
fYear :
2002
fDate :
4-7 Aug. 2002
Abstract :
The design of a CMOS bandgap reference (BGR), for portable applications with medium accuracy, is described and the measurement results of the fabricated chips are presented. The output voltage of the reference is set by resistive subdivision. In order to achieve small area and low power consumption, n-well resistors are used. This design features a reference voltage of 0.750 V with 1σ variation of 10 mV (1.3%) without trimming with a supply voltage range from 1 V to 1.6 V and temperature range of -20°C-50°C measured from 10 samples. The maximum supply current is 4.5 μA and the area of the design is ∼0.13 mm2 with a standard 0.35 μm double-poly n-well CMOS process.
Keywords :
CMOS analogue integrated circuits; integrated circuit design; integrated circuit measurement; low-power electronics; resistors; voltage regulators; -20 to 50 degC; 0.35 micron; 0.750 V; 1 V; 1 to 1.6 V; 4.5 muA; CMOS voltage reference; double-poly n-well CMOS process; low power bandgap reference; low power consumption; maximum supply current; medium accuracy BGR; n-well resistors; portable electronics; resistive subdivision; supply voltage range; temperature range; Circuit topology; Current supplies; Diodes; Electric variables measurement; Energy consumption; Low voltage; Photonic band gap; Resistors; Semiconductor device measurement; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on
Print_ISBN :
0-7803-7523-8
Type :
conf
DOI :
10.1109/MWSCAS.2002.1187099
Filename :
1187099
Link To Document :
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