• DocumentCode
    3296891
  • Title

    Thin film phosphor prepared by physical vapour deposition for FED application

  • Author

    Yun Hi Lee ; Song, Man Ho ; Ju, Byeong Kwon ; Oh, Myung Hwan

  • Author_Institution
    Div. of Electron. & Inf. Technol., Korea Inst. of Sci. & Technol., Seoul, South Korea
  • fYear
    1996
  • fDate
    7-12 Jul 1996
  • Firstpage
    619
  • Lastpage
    622
  • Abstract
    We fabricated ZnO:Zn film by rf magnetron sputtering and ZnS:Pr,Ce layer by electron-beam evaporation for color FED application. Also, in order to investigate influence of surface conductivity of phosphor film on the threshold voltage of emission, we fabricated two different kinds of layered structures having an additional conducting layer such as 5nm thick Sn-doped In2O3 film. CL emission spectrum of sputtered ZnO:Zn(250 nm) film shows a two broad peaks centered around 540 nm and 600 nm. The spectra characteristic of ZnS:Pr,Ce films shows white spectrum that covered a whole visible wavelength. One of the effects of an additional surface layer of ITO on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength
  • Keywords
    II-VI semiconductors; cathodoluminescence; cerium; electron beam deposition; flat panel displays; phosphors; praseodymium; sputtered coatings; surface conductivity; vacuum microelectronics; zinc; zinc compounds; 540 nm; 600 nm; CL emission spectrum; FED application; ZnO:Zn; ZnS:Pr,Ce; electron-beam evaporation; physical vapour deposition; rf magnetron sputtering; spectra characteristic; spectrum shift; surface conductivity; thin film phosphor; threshold voltage; Chemical vapor deposition; Conductive films; Conductivity; Indium tin oxide; Phosphors; Sputtering; Surface waves; Threshold voltage; Zinc compounds; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    0-7803-3594-5
  • Type

    conf

  • DOI
    10.1109/IVMC.1996.601899
  • Filename
    601899