Title :
Thin film phosphor prepared by physical vapour deposition for FED application
Author :
Yun Hi Lee ; Song, Man Ho ; Ju, Byeong Kwon ; Oh, Myung Hwan
Author_Institution :
Div. of Electron. & Inf. Technol., Korea Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
We fabricated ZnO:Zn film by rf magnetron sputtering and ZnS:Pr,Ce layer by electron-beam evaporation for color FED application. Also, in order to investigate influence of surface conductivity of phosphor film on the threshold voltage of emission, we fabricated two different kinds of layered structures having an additional conducting layer such as 5nm thick Sn-doped In2O3 film. CL emission spectrum of sputtered ZnO:Zn(250 nm) film shows a two broad peaks centered around 540 nm and 600 nm. The spectra characteristic of ZnS:Pr,Ce films shows white spectrum that covered a whole visible wavelength. One of the effects of an additional surface layer of ITO on ZnO and ZnS phosphor is the shift of spectrum toward shorter wavelength
Keywords :
II-VI semiconductors; cathodoluminescence; cerium; electron beam deposition; flat panel displays; phosphors; praseodymium; sputtered coatings; surface conductivity; vacuum microelectronics; zinc; zinc compounds; 540 nm; 600 nm; CL emission spectrum; FED application; ZnO:Zn; ZnS:Pr,Ce; electron-beam evaporation; physical vapour deposition; rf magnetron sputtering; spectra characteristic; spectrum shift; surface conductivity; thin film phosphor; threshold voltage; Chemical vapor deposition; Conductive films; Conductivity; Indium tin oxide; Phosphors; Sputtering; Surface waves; Threshold voltage; Zinc compounds; Zinc oxide;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601899