Title :
Software for Silicon Ingots Parameters Measuring Equipment
Author :
Anishchik, Vladimir
Author_Institution :
Siberian State Geodetic Acad., Novosibirsk
fDate :
June 1 2007-July 5 2007
Abstract :
Modernization of software for non- equilibrium charge carrier lifetime in silicon ingots measuring equipment was implemented. Reliability and speed of measuring system were increased. New methods of lifetime calculation were added. Software features were expanded.
Keywords :
electronic engineering computing; ingots; semiconductor device measurement; lifetime calculation; measuring system reliability; nonequilibrium charge carrier; silicon ingots parameters measuring equipment; software modernization; Charge measurement; Current measurement; Graphics; Microwave devices; Microwave measurements; Microwave theory and techniques; Position measurement; Silicon; Software measurement; Time measurement;
Conference_Titel :
Electron Devices and Materials, 2007. EDM '07. 8th Siberian Russian Workshop and Tutorial on
Conference_Location :
Erlagol, Altai
Print_ISBN :
978-5-7782-0752-3
DOI :
10.1109/SIBEDM.2007.4293005
