Characterization of transient behavior and failure mechanism of polysilicon-bound diode under CDM-like very-fast transmission line pulsing

Author

Li, You ; Liou, Juin J. ; Liu, Wen

Author_Institution

Sch. of EE & CS, Univ. of Central Florida, Orlando, FL, USA

fYear

2010

fDate

5-9 July 2010

Firstpage

1

Lastpage

5

Abstract

Transient behaviors of poly-bound diode subject to fast ESD events such as the Charged Device Model (CDM) are characterized using pulses generated by the very-fast transmission line pulsing (VFTLP) tester. The effects of changing diode´s dimension parameters on the overshoot voltage and turn-on time are studied. The correlation between the poly-bound diode failure and poly-gate configuration under the VFTLP stress is also investigated.

Keywords

electrostatic discharge; semiconductor diodes; transient analysis; CDM-like very-fast transmission line pulsing; ESD event; charged device model; overshoot voltage; poly-gate configuration; polysilicon-bound diode failure mechanism; transient behavior characterization; turn-on time; very-fast transmission line pulsing tester; Character generation; Diodes; Electrostatic discharge; Failure analysis; Power system transients; Pulse generation; Stress; Testing; Transmission lines; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2010 17th IEEE International Symposium on the

Conference_Location

Singapore

ISSN

1946-1542

Print_ISBN

978-1-4244-5596-6

Type

conf

DOI

10.1109/IPFA.2010.5532079

Filename

5532079