DocumentCode :
3297534
Title :
High-Frequency Effects of Orthogonal Interconnect Layers on Inductance in High-Speed VLSI Circuits
Author :
Quéré, Yves ; Le Gouguec, Thierry ; Tanguy, Noël ; Martin, Pierre-Marie ; Le Berre, Daniel ; Huret, Fabrice
Author_Institution :
LEST-UMR CNRS
fYear :
2006
fDate :
9-12 May 2006
Firstpage :
253
Lastpage :
256
Abstract :
This communication deals with frequency behavior of orthogonal interconnect layers on inductance in high-speed VLSI circuits. The RLC parameters of the distributed model are determined by electromagnetic simulations. We evidence the error made on inductance in the range 1-50 GHz for three traditional interconnect configurations. A time-domain analysis highlights the impact of the inductance error on digital signals propagation. This analysis uses a numerical tool to take into account the frequency dependence of RLC parameters
Keywords :
CMOS integrated circuits; MMIC; RLC circuits; UHF integrated circuits; VLSI; integrated circuit interconnections; time-domain analysis; 1 to 50 GHz; CMOS technology; RLC parameters; digital signals propagation; distributed model; electromagnetic simulations; high-speed VLSI circuits; inductance error; orthogonal interconnect layers; time-domain analysis; CMOS technology; Capacitance; Circuit simulation; Copper; Crosstalk; Frequency dependence; Inductance; Integrated circuit interconnections; RLC circuits; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Signal Propagation on Interconnects, 2006. IEEE Workshop on
Conference_Location :
Berlin, Germany
Print_ISBN :
1-4244-0455-x
Electronic_ISBN :
1-4244-0455-x
Type :
conf
DOI :
10.1109/SPI.2006.289237
Filename :
4069472
Link To Document :
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