DocumentCode
3298118
Title
Silicon carbide power transistors for photovoltaic applications
Author
Tiwari, Sunita ; Abuishmais, I. ; Undeland, Tore ; Boysen, Kjetil
Author_Institution
Norwegian Univ. of Sci. & Technol., Trondheim, Norway
fYear
2011
fDate
19-23 June 2011
Firstpage
1
Lastpage
6
Abstract
Silicon Carbide is the promising technology for the applications in high frequency, high voltage, high power and high temperature, principally due to their low conduction losses and fast switching capability. The aim of this paper is to test and evaluate the dynamic characteristics of SiC transistors and describe the utilization of full performance of SiC for photovoltaic applications. A standard double pulse test with a clamped inductive load has been used for dynamic characterization of the power transistors at different temperatures and load conditions.
Keywords
photovoltaic power systems; power transistors; silicon compounds; wide band gap semiconductors; SiC; clamped inductive load; low conduction losses; photovoltaic system; silicon carbide power transistors; standard double pulse test; Energy loss; Inductance; Inverters; Silicon carbide; Switches; Switching circuits; Temperature; Choppers; JFETs; Power Transistors; Snubbers; Wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
PowerTech, 2011 IEEE Trondheim
Conference_Location
Trondheim
Print_ISBN
978-1-4244-8419-5
Electronic_ISBN
978-1-4244-8417-1
Type
conf
DOI
10.1109/PTC.2011.6019191
Filename
6019191
Link To Document