Title :
An NMOS inductive loading technique for extended operating frequency CMOS ring oscillators
Author :
Worapishet, A. ; Thamsirianunt, M.
Author_Institution :
Mahanakom Microelectron. Res. Centre, Mahanakorn Univ. of Technol., Thailand
Abstract :
The circuit architecture of the active inductive load based upon an nMOS transistor for frequency enhancement in CMOS ring oscillators is described. Emphasis is given to the performance analysis and design guidelines of the inductive loading technique as well as its theoretical comparison with the ordinary resistive loading ring oscillator. Implemented using a 0.35 μm, 3.3 V CMOS process, the simulated 3-stage nMOS inductive ring oscillator meet the specified target at 2.4 GHz even at slow process extreme and 125°C temperature while consuming less than 47.5 mW of power.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF oscillators; 0.35 micron; 125 degC; 2.4 GHz; 3.3 V; 47.5 mW; CMOS ring oscillators; NMOS inductive loading technique; active inductive load; design guidelines; extended operating frequency ring oscillators; frequency enhancement; nMOS transistor; performance analysis; BiCMOS integrated circuits; CMOS integrated circuits; CMOS process; CMOS technology; Delay; Frequency; MOS devices; MOSFETs; Ring oscillators; Voltage-controlled oscillators;
Conference_Titel :
Circuits and Systems, 2002. MWSCAS-2002. The 2002 45th Midwest Symposium on
Print_ISBN :
0-7803-7523-8
DOI :
10.1109/MWSCAS.2002.1187170
