• DocumentCode
    3298269
  • Title

    Diamond coated Spindt-type arrays for emission enhancement

  • Author

    Heinen, V. ; Varaljay, N. ; Dayton, J.A., Jr. ; Mearini, G.T. ; Wang, Yaxin ; Kusner, R.E. ; Kunszt, R.M.

  • Author_Institution
    NASA Lewis Res. Center, Cleveland, OH, USA
  • fYear
    1996
  • fDate
    7-12 Jul 1996
  • Firstpage
    661
  • Abstract
    Summary form only given, as follows. Conventional field emitters require fields of ~5 MV/cm to produce emission. It has been observed recently that CVD diamond produces cold field emission at applied fields ~20 kV/cm. Spindt type arrays have been fabricated at NASA Lewis to investigate cold field emission for space communication applications. There has been much effort to integrate the field emission properties of diamond with the proven Spindt-type cathode design. A technique has been developed which utilizes Biased-Enhanced-Nucleation (BEN) and allows CVD diamond growth to take place on only the Mo tips of the Spindt-type array. The diamond coating can be doped with various materials which might enhance field emission from the tips. Previous device designs utilizing N-doped diamond have produced current densities of up to 10 A/cm2 with 100 V applied bias. Spindt-type cathodes are operated before and after diamond coatings to assess the emission enhancement
  • Keywords
    CVD coatings; cathodes; chemical vapour deposition; diamond; electron field emission; elemental semiconductors; nucleation; semiconductor growth; semiconductor thin films; vacuum microelectronics; 100 V; C-Mo; C:N; CVD diamond growth; Mo; Mo tips; N-doped diamond; NASA Lewis; Spindt-type cathode design; biased-enhanced-nucleation; cold field emission; diamond coated Spindt-type arrays; emission enhancement; field emitter arrays; space communication applications; Cathodes; Coatings; Current density; NASA; Physics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    0-7803-3594-5
  • Type

    conf

  • DOI
    10.1109/IVMC.1996.601920
  • Filename
    601920