Characterization of lateral thin-film-edge field emitter arrays

Author

Johnson, B.R. ; Akinwande, A.I. ; Murphy, D.

Author_Institution

Honeywell Technol. Center, MN, USA

fYear

1996

fDate

7-12 Jul 1996

Firstpage

663

Lastpage

667

Abstract

Measurements on arrays of lateral thin-film-edge field emitters are described, including current-voltage characteristics and results obtained with a high-voltage (10 kV) cathodoluminescent phosphor screen. These devices offer the potential for enhanced emitter lifetime compared to conventional microtips, because one of the gate electrodes protects the emitter edge from ion sputter damage. One goal of this work is to demonstrate the feasibility of a cathodoluminescent field emitter lamp for a high-brightness backlight in an avionics AMLCD display

Keywords

aircraft displays; cathodoluminescence; electron field emission; liquid crystal displays; vacuum microelectronics; 10 kV; FEA; HV cathodoluminescent phosphor screen; avionics AMLCD display; cathodoluminescent field emitter lamp; current-voltage characteristics; emitter edge protection; emitter lifetime enhancement; field emitter arrays; gate electrodes; high-brightness backlight; ion sputter damage; lateral thin-film-edge field emitters; Active matrix liquid crystal displays; Aerospace electronics; Brightness; Cathodes; Electrodes; Field emitter arrays; Fluorescence; Phosphors; Protection; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601922

Filename

601922