Power SiC MOSFET model with simplified description of linear and saturation operating regions

The goal of this work is to develop a physics-based SiC MOSFET model with a simplified description of linear and saturation operation mechanism in the channel and JFET region. Finite element simulations show that most of the increased voltage drop at saturation occurs at the end of the channel and in the JFET region close to the channel, which is the region where the current spreads out from the channel. A simplified model is proposed to simply describe the mechanism of current saturation of power SiC MOSFET using a nonlinear voltage source at the end of the channel. The model is validated both statically and under resistive and inductive switching conditions for SiC MOSFET.