• DocumentCode
    3299481
  • Title

    BiCMOS device modeling for RF IC design

  • Author

    Hull, Christopher ; Kishore, S.V.

  • Author_Institution
    Silicon Wave, San Diego, CA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    17
  • Lastpage
    22
  • Abstract
    A review of BiCMOS modeling from a RF designer´s point of view is presented, Pitfalls of standard models are shown in the context of modern device design. A few circuit examples are presented to illustrate the impact of device modeling on RF IC design
  • Keywords
    BiCMOS integrated circuits; UHF integrated circuits; integrated circuit design; integrated circuit modelling; reviews; semiconductor device models; BiCMOS device modelling; RF IC design; RFICs; review; standard models; Admittance; BiCMOS integrated circuits; Capacitance; Circuit synthesis; Current density; Integrated circuit modeling; MOSFETs; Radio frequency; Radiofrequency integrated circuits; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-5714-0
  • Print_ISBN
    0-7803-5712-4
  • Type

    conf

  • DOI
    10.1109/BIPOL.1999.803516
  • Filename
    803516
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3299481