RF and microwave noise optimization of UHV/CVD SiGe HBTs

Author

Niu, Guofu ; Ansley, William E. ; Zhang, Shiming ; Cressler, John D. ; Webster, Charles S. ; Groves, Rob

Author_Institution

Dept. of Electr. Eng., Auburn Univ., AL, USA

fYear

1999

fDate

1999

Firstpage

23

Lastpage

26

Abstract

This paper demonstrates a predictive noise estimation methodology for SiGe HBTs which combines AC measurement, calibrated AC simulation and two of the latest Y-parameter-based noise models. The current and frequency dependence of the minimum noise figure, the optimum generator admittance, and the noise resistance are simulated and compared with measurements. The observed agreements and discrepancies are investigated using circuit analysis of the chain noisy two-port representation. The SPICE model description of thermal noise produces a better overall agreement to data for the devices under study

Keywords

Ge-Si alloys; UHF bipolar transistors; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; optimisation; semiconductor device models; semiconductor device noise; semiconductor materials; thermal noise; AC measurement; RF noise optimization; SPICE model description; UHV/CVD SiGe HBTs; Y-parameter-based noise models; calibrated AC simulation; chain noisy two-port representation; circuit analysis; current dependence; frequency dependence; microwave noise optimization; minimum noise figure; noise resistance; optimum generator admittance; predictive noise estimation methodology; thermal noise; Circuit noise; Circuit simulation; Electrical resistance measurement; Frequency dependence; Germanium silicon alloys; Noise figure; Noise measurement; Predictive models; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999

Conference_Location

Minneapolis, MN

ISSN

1088-5714-0

Print_ISBN

0-7803-5712-4

Type

conf

DOI

10.1109/BIPOL.1999.803517

Filename

803517