Title :
RF and microwave noise optimization of UHV/CVD SiGe HBTs
Author :
Niu, Guofu ; Ansley, William E. ; Zhang, Shiming ; Cressler, John D. ; Webster, Charles S. ; Groves, Rob
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
Abstract :
This paper demonstrates a predictive noise estimation methodology for SiGe HBTs which combines AC measurement, calibrated AC simulation and two of the latest Y-parameter-based noise models. The current and frequency dependence of the minimum noise figure, the optimum generator admittance, and the noise resistance are simulated and compared with measurements. The observed agreements and discrepancies are investigated using circuit analysis of the chain noisy two-port representation. The SPICE model description of thermal noise produces a better overall agreement to data for the devices under study
Keywords :
Ge-Si alloys; UHF bipolar transistors; equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; optimisation; semiconductor device models; semiconductor device noise; semiconductor materials; thermal noise; AC measurement; RF noise optimization; SPICE model description; UHV/CVD SiGe HBTs; Y-parameter-based noise models; calibrated AC simulation; chain noisy two-port representation; circuit analysis; current dependence; frequency dependence; microwave noise optimization; minimum noise figure; noise resistance; optimum generator admittance; predictive noise estimation methodology; thermal noise; Circuit noise; Circuit simulation; Electrical resistance measurement; Frequency dependence; Germanium silicon alloys; Noise figure; Noise measurement; Predictive models; Radio frequency; Silicon germanium;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803517
