• DocumentCode
    3299511
  • Title

    Dual wavelength semiconductor laser using asymmetric phase-shifts

  • Author

    Xiangfei Chen

  • Author_Institution
    Nat. Lab. of Solid State Microstructures, Nanjing Univ., Nanjing, China
  • fYear
    2013
  • fDate
    26-28 July 2013
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A novel dual wavelength semiconductor laser is proposed and experimentally demonstrated. Stable dual wavelength lasing is established by the grating structure consisting of two asymmetric phase-shifts, which are distributed along the phase-arranging regions (PARs) in the sampling pattern. The wavelength spacing is about 0.51 nm corresponding to a beat signal about 64 GHz.
  • Keywords
    diffraction gratings; laser stability; optical phase shifters; semiconductor lasers; PAR; asymmetric phase-shifts; dual wavelength semiconductor laser; grating structure; phase-arranging regions; sampling pattern; stable dual wavelength lasing; wavelength spacing; Distributed feedback devices; Gratings; Laser stability; Laser theory; Masers; Semiconductor lasers; Distributed feedback lasers; dual wavelength lasers; sampled Bragg grating (SBG);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Communications and Networks (ICOCN), 2013 12th International Conference on
  • Conference_Location
    Chengdu
  • Type

    conf

  • DOI
    10.1109/ICOCN.2013.6617201
  • Filename
    6617201
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3299511