Title :
Dual wavelength semiconductor laser using asymmetric phase-shifts
Author_Institution :
Nat. Lab. of Solid State Microstructures, Nanjing Univ., Nanjing, China
Abstract :
A novel dual wavelength semiconductor laser is proposed and experimentally demonstrated. Stable dual wavelength lasing is established by the grating structure consisting of two asymmetric phase-shifts, which are distributed along the phase-arranging regions (PARs) in the sampling pattern. The wavelength spacing is about 0.51 nm corresponding to a beat signal about 64 GHz.
Keywords :
diffraction gratings; laser stability; optical phase shifters; semiconductor lasers; PAR; asymmetric phase-shifts; dual wavelength semiconductor laser; grating structure; phase-arranging regions; sampling pattern; stable dual wavelength lasing; wavelength spacing; Distributed feedback devices; Gratings; Laser stability; Laser theory; Masers; Semiconductor lasers; Distributed feedback lasers; dual wavelength lasers; sampled Bragg grating (SBG);
Conference_Titel :
Optical Communications and Networks (ICOCN), 2013 12th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICOCN.2013.6617201
