DocumentCode :
3299560
Title :
A compact square-cell ESD structure for BiCMOS IC
Author :
Wang, A.Z. ; Tsay, C.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
fYear :
1999
fDate :
1999
Firstpage :
46
Lastpage :
49
Abstract :
Design of a compact square-cell, dual-direction ESD protection structure for BiCMOS ICs is reported. Detailed design features, such as, improved current uniformity, high-ESD protection level (>14 kV HBM), high-ESDV/Si ratio (~1.66 V/μm2), and adjustable trigger voltage are discussed
Keywords :
BiCMOS integrated circuits; electrostatic discharge; integrated circuit design; protection; 14 kV; BiCMOS IC; adjustable trigger voltage; compact square-cell ESD structure; current uniformity; design features; dual-direction ESD protection structure; high-ESD protection level; high-ESDV/Si ratio; BiCMOS integrated circuits; Electrostatic discharge; Equivalent circuits; Impedance; Partial discharges; Plugs; Semiconductor diodes; Surge protection; Switches; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
ISSN :
1088-5714-0
Print_ISBN :
0-7803-5712-4
Type :
conf
DOI :
10.1109/BIPOL.1999.803522
Filename :
803522
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3299560
بازگشت