Intermodulation characteristics of UHV/CVD SiGe HBTs

Author

Niu, Guofu ; Cressler, John D. ; Ansley, William E. ; Webster, Charles S. ; Anna, Raghunadha B. ; King, Nathaniel

Author_Institution

Dept. of Electr. Eng., Auburn Univ., AL, USA

fYear

1999

fDate

1999

Firstpage

50

Lastpage

53

Abstract

Extensive SPICE circuit simulations were performed to explore the physics underlying the unusually high linearity (15 dBc OIP3/P_DC) observed in SiGe HBT´s. The EB and CB depletion capacitances were found to be the major contributors to the observed high linearity. Both the absolute value and the bias dependence of the depletion capacitances contribute to nonlinearity, while the diffusion capacitance has negligible impact

Keywords

Ge-Si alloys; SPICE; capacitance; heterojunction bipolar transistors; intermodulation; semiconductor device measurement; semiconductor device models; semiconductor materials; CB depletion capacitance; EB depletion capacitance; SPICE circuit simulations; UHV/CVD SiGe HBTs; bias dependence; diffusion capacitance; high linearity; intermodulation characteristics; Capacitance; Circuit simulation; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Microelectronics; Power generation; SPICE; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999

Conference_Location

Minneapolis, MN

ISSN

1088-5714-0

Print_ISBN

0-7803-5712-4

Type

conf

DOI

10.1109/BIPOL.1999.803523

Filename

803523