Title :
Optical modulation and detection based on a PN junction embedded silicon waveguide
Author :
Hui Yu ; Jianyi Yang ; Xiaoqing Jiang
Author_Institution :
Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
A carrier-depletion-based silicon MZ modulator is used for high-speed optical detection by leveraging the defect mediated absorption. As a modulator, the device exhibits a modulation efficiency of VπLπ=1.2 V.cm while as a detector, the responsivity is 22 mA/W at a reverse bias of-7.1 V. An operation speed of 35 Gb/s is obtained for both optical modulation and detection.
Keywords :
elemental semiconductors; optical communication; optical modulation; optical waveguides; p-n junctions; silicon; PN junction embedded silicon waveguide; bit rate 35 Gbit/s; carrier-depletion-based silicon MZ modulator; high-speed optical detection; optical modulation; reverse bias; Optical amplifiers; Optical modulation; Optical waveguides; Photoconductivity; Photonics; Silicon; detector; modulator; silicon photonics;
Conference_Titel :
Optical Communications and Networks (ICOCN), 2013 12th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICOCN.2013.6617206
