Title :
Large bandgap shift by UV excimer laser induced quantum well intermixing for photonic integration
Author :
Yuan Zhuang ; Xin Zhang ; Kaleem, Mohammed ; Jian-Jun He
Author_Institution :
Dept. of Opt. Eng., Zhejiang Univ., Hangzhou, China
Abstract :
A bandgap blue shift of 142nm with enhanced photoluminescence (PL), is demonstrated experimentally. in an InGaAsP/InP quantum well (QW) structure using KrF excimer laser induced quantum well intermixing (QWI) technique. The simple process only involves irradiation of UV pulses from a KrF excimer laser, followed by rapid thermal annealing (RTA) at 750 °C for 2 minutes. The absorption constant at the original band-edge is reduced to only 20dB/cm for the QWI waveguide. The fabricated QWI FP laser also has excellent optical and electrical properties, showing good potential for applications in monolithic integrated multibandgap devices.
Keywords :
III-V semiconductors; electric properties; excimer lasers; gallium arsenide; indium compounds; integrated optics; laser beams; light absorption; optical materials; optical properties; photoluminescence; quantum wells; rapid thermal annealing; spectral line shift; ultraviolet spectra; FP laser; Fabry-Perot laser; InGaAsP-InP; KrF; UV excimer laser; absorption constant; bandgap blue shift; electrical properties; enhanced photoluminescence; large bandgap shift; optical properties; photonic integration; quantum well intermixing; quantum well structure; rapid thermal annealing; temperature 750 C; Indium phosphide; Lasers; Measurement by laser beam; Optical device fabrication; Optical waveguides; Photonic band gap; Waveguide lasers; photonic integrated circuits (PIC); quantum well intermixing (QWI); semiconductor laser;
Conference_Titel :
Optical Communications and Networks (ICOCN), 2013 12th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICOCN.2013.6617207
