• DocumentCode
    3299717
  • Title

    Novel high voltage SOI structures

  • Author

    Huang, A.Q. ; Li, X. ; Sun, N.X.

  • Author_Institution
    Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    84
  • Lastpage
    88
  • Abstract
    This paper proposes several new device structures suitable for realizing high voltage power devices in thin SOI layer. Both analytical and simulation results show that the on-resistance of a unipolar device based on these structures is significantly reduced and the figure-of-merit, Ron/VB, can be an order of magnitude smaller than the theoretical limitation of vertical power devices
  • Keywords
    CMOS integrated circuits; power integrated circuits; silicon-on-insulator; CMOS ICs; Si; figure-of-merit; high voltage SOI structures; high-voltage ICs; on-resistance; unipolar device; vertical power devices; Analytical models; Boundary conditions; Circuits; Doping; Parasitic capacitance; Power electronics; Silicon on insulator technology; Sun; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-5714-0
  • Print_ISBN
    0-7803-5712-4
  • Type

    conf

  • DOI
    10.1109/BIPOL.1999.803532
  • Filename
    803532
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3299717