Title :
A numerical study of UTC-PD structures with berylium as the p-dopant
Author :
Guoxuan Zhu ; Xiaoqiang Liu ; Lin Yan ; Lijun Zhu ; Zhaoyong Lin ; Qingsheng Xiao ; Yujie Chen ; Yonggang Zhang ; Yanfeng Zhang ; Siyuan Yu
Author_Institution :
Sch. of Phys. & Eng., Sun Yat-sen Univ., Guangzhou, China
Abstract :
We numerically investigate UTC PD structures that use highly diffusible beryllium (Be) as the p-type impurity in absorption layer An intrinsic InGaAs layer is added between the absorption layer and collection layer as a diffusion buffer. The influence of this buffer layer is analyzed, and the results obtain shows that high responsivity and high speed can be achieved.
Keywords :
III-V semiconductors; beryllium; buffer layers; diffusion; gallium arsenide; indium compounds; photodetectors; semiconductor doping; Be; InGaAs; UTC-PD structures; absorption layer; buffer layer; collection layer; diffusion buffer; p-dopant; p-type impurity; Absorption; Buffer layers; Doping; Electric fields; Impurities; Indium gallium arsenide; Time factors; Gaussian doping; In GaAs; Key words: UTC PD; absorption layer; buffer layer;
Conference_Titel :
Optical Communications and Networks (ICOCN), 2013 12th International Conference on
Conference_Location :
Chengdu
DOI :
10.1109/ICOCN.2013.6617210
