Title :
Simulation and measurement of a chopper cell involving two symmetric voltage capability IGBTs
Author :
Berraies, M.O. ; Austin, P. ; Sanchez, J. -L ; Laur, J.-P. ; Roy, M.
Author_Institution :
Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France
Abstract :
In this paper, simulation and experiment of a symmetric voltage capability IGBT operating in a chopper cell as both the main switch and the free-wheeling diode are presented. We also propose a physical interpretation of the switching behavior under reverse bias on the basis of a physical description of the charge dynamics. The long-term objective of this work is the monolithic integration of a two-directional current and/or voltage switch controlled at turn off and turn-on
Keywords :
choppers (circuits); insulated gate bipolar transistors; power integrated circuits; power semiconductor switches; power transistors; switching; bi-directional current switch; bi-directional voltage switch; charge dynamics; chopper cell; free-wheeling diode; main switch; monolithic integration; reverse bias; switching behavior; symmetric voltage capability IGBTs; Anodes; Charge carrier processes; Choppers; Equations; Insulated gate bipolar transistors; Libraries; Monolithic integrated circuits; Semiconductor diodes; Switches; Voltage control;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5712-4
DOI :
10.1109/BIPOL.1999.803533
