Simulation and measurement of a chopper cell involving two symmetric voltage capability IGBTs

Author

Berraies, M.O. ; Austin, P. ; Sanchez, J. -L ; Laur, J.-P. ; Roy, M.

Author_Institution

Lab. d´´Anal. et d´´Archit. des Syst., CNRS, Toulouse, France

fYear

1999

fDate

1999

Firstpage

89

Lastpage

92

Abstract

In this paper, simulation and experiment of a symmetric voltage capability IGBT operating in a chopper cell as both the main switch and the free-wheeling diode are presented. We also propose a physical interpretation of the switching behavior under reverse bias on the basis of a physical description of the charge dynamics. The long-term objective of this work is the monolithic integration of a two-directional current and/or voltage switch controlled at turn off and turn-on

Keywords

choppers (circuits); insulated gate bipolar transistors; power integrated circuits; power semiconductor switches; power transistors; switching; bi-directional current switch; bi-directional voltage switch; charge dynamics; chopper cell; free-wheeling diode; main switch; monolithic integration; reverse bias; switching behavior; symmetric voltage capability IGBTs; Anodes; Charge carrier processes; Choppers; Equations; Insulated gate bipolar transistors; Libraries; Monolithic integrated circuits; Semiconductor diodes; Switches; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1999. Proceedings of the 1999

Conference_Location

Minneapolis, MN

ISSN

1088-5714-0

Print_ISBN

0-7803-5712-4

Type

conf

DOI

10.1109/BIPOL.1999.803533

Filename

803533